Fluctuation Phenomena Studies in Chemically Sensitive Field Effect Transistors. Part 2. Corrosion of Silicon Oxynitride.
Interim technical rept.,
UTAH UNIV SALT LAKE CITY DEPT OF BIOENGINEERING
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Drain current fluctuations in a field effect transistor caused by the corrosion of silicon oxynitride have been measured and analyzed. It has been shown that under wet etching conditions the surface of silicon oxynitride becomes conducting. The equivalent electrical circuit corresponding to this situation has been proposed.
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