Accession Number:

ADA148227

Title:

Fluctuation Phenomena Studies in Chemically Sensitive Field Effect Transistors. Part 2. Corrosion of Silicon Oxynitride.

Descriptive Note:

Interim technical rept.,

Corporate Author:

UTAH UNIV SALT LAKE CITY DEPT OF BIOENGINEERING

Personal Author(s):

• Li,Z. K.
• Reijn,J. M.
• Janata,J.

Report Date:

1984-11-20

Pagination or Media Count:

25.0

Abstract:

Drain current fluctuations in a field effect transistor caused by the corrosion of silicon oxynitride have been measured and analyzed. It has been shown that under wet etching conditions the surface of silicon oxynitride becomes conducting. The equivalent electrical circuit corresponding to this situation has been proposed.

Descriptors:

• *CORROSION
• *FIELD EFFECT TRANSISTORS
• *NITRIDES
• *SILICON COMPOUNDS
• CONDUCTIVITY
• ETCHING
• VARIATIONS
• SURFACES
• ELECTRIC CURRENT
• EQUIVALENT CIRCUITS

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE