Impurity and Defect Characterization in Epitaxial GaAs InP and the Ternary and Quaternary Compound Semiconductors.
Final scientific rept. 1 Aug 78-31 Jul 83,
MASSACHUSETTS INST OF TECH CAMBRIDGE FRANCIS BITTER NATIONAL MAGNET LAB
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Experimental techniques were developed and used for the unambiguous identification of donors in high-purity epitaxial GaAs, InP and related compounds. Magnetic fields up to 20 T and high-resolution submillimeter spectroscopy were used to distinguish the Zeeman transitions 1s 2pm1 of each different donor and to describe the dependence of the line shape on field intensity. Transmutation doping was used to distinguish Se and Ge donors, molecular beam epitaxy to distinguish Sn. These methods were extended to InGaAs near millimeter wavelengths. Finally, the magnetic field dependence of the spin doublet in GaAs was measured.
- Solid State Physics