Accession Number:

ADA143465

Title:

Quantum Structure of Adsorbates on Semiconductor Surfaces.

Descriptive Note:

Final rept. 1 Jul 82-31 Dec 83,

Corporate Author:

MONTANA STATE UNIV BOZEMAN DEPT OF PHYSICS

Personal Author(s):

Report Date:

1983-12-01

Pagination or Media Count:

28.0

Abstract:

Polarization-dependent angle-resolved photoemission spectroscopy with synchrotron radiation was performed fo Ge adatom on GaAs110 surfaced in the monolayer regime. Chemisorbed states at the gamma point in the Brillouin zone were observed about 6.8 eV below the valence band maximum. The states are attributed to chemisorption states that are precursors ot GeGaAs heterojunction interface states which are theoreticallY predicted. A special low temperature UHV manipulator was constructed and used to perform oxygen and Co physisorbtion experiments on GaAs110 at about 45 K.

Subject Categories:

  • Quantum Theory and Relativity
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE