Basic Problems in InP Technology.
Final rept. 16 Nov 79-31 Mar 83,
HUGHES RESEARCH LABS MALIBU CA
Pagination or Media Count:
Procedures for evaluating the thermal stability of bulk semi-insulating InP have been developed. Determination of the concentrations in semi insulating InP is a major analytical problem. Preliminary SIMS secondary ion mass spectrometry measurements show that significant redistribution of Fe can occur during high temperature processing. Severe degradation can occur in ion-implanted InP samples annealed with SiO2 and encapsulated at temperatures of 750 C. The use of phosphosilicate glass dramatically reduces such surface degradation. Energy dispersive X-ray analysis EDAX shows that the loss of P at the surface is the cause of such degradation.
- Solid State Physics