Accession Number:

ADA143456

Title:

Basic Problems in InP Technology.

Descriptive Note:

Final rept. 16 Nov 79-31 Mar 83,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1984-03-01

Pagination or Media Count:

74.0

Abstract:

Procedures for evaluating the thermal stability of bulk semi-insulating InP have been developed. Determination of the concentrations in semi insulating InP is a major analytical problem. Preliminary SIMS secondary ion mass spectrometry measurements show that significant redistribution of Fe can occur during high temperature processing. Severe degradation can occur in ion-implanted InP samples annealed with SiO2 and encapsulated at temperatures of 750 C. The use of phosphosilicate glass dramatically reduces such surface degradation. Energy dispersive X-ray analysis EDAX shows that the loss of P at the surface is the cause of such degradation.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE