Preparation of High Purity Ga(X)In(1-x)As by the VPE-Hydride Method with a Gallium-Indium Alloy Source,
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
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The preparation of epitaxial layers of the ternary, GaxIn1-xAs, by the VPE-Hydride technique using a Ga-In alloy source is described. The alloy composition necessary to produce Ga0.47In0.53 As was found to be 12.2 mole percent Ga-87.8 mole percent In at source, mixing, and deposition temperatures of 800, 850, and 700 C, respectively. Maximum growth rates of the order of 0.1 micrometermin were observed when the source HC1 had a flow rate of 2.3 ccmin. The In content increases slightly with the number of runs using the same alloy. An increase in deposition temperature from 700 to 750 C exhibited no effect on the composition of the GaxIn1-x As layer. The electrical properties of the epitaxial layers obtained compare favorably with other growth methods, n 2.8 x 10 to the 15th powercu. cm 300K and mu 8852 sq cmV-sec 300K. The study illustrates that the use of an alloy in the VPE-Hydride technique using a single-barrel reactor is a viable method to grow epitaxial layers of Ga0.47 In0.53As.