Low Temperature Epitaxial Deposition of Silicon by Plasma Enhanced CVD (Chemical Vapor Deposition).
Final technical rept. 1 Jun 81-30 Nov 83,
MASSACHUSETTS INST OF TECH CAMBRIDGE
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A reactor system has been developed to deposit specular epitaxial silicon films at temperatures as low as 620 C using a low pressure chemical vapor deposition process both with and without plasma enhancement. This represents the lowest silicon epitaxial deposition temperature ever reported for a thermally driven chemical vapor deposition process. Experiments performed at 775 C indicate that the predeposition in-situ cleaning of the substrate surface is the critical step in determining whether epitaxial deposition will occur. Surface cleaning in these experiments was done by sputtering in an argon plasma ambient at the deposition temperature while applying a dc bias to the susceptor. This is the lowest pre-epitaxial cleaning temperature ever reported for a thermally driven chemical vapor deposition. Author
- Manufacturing and Industrial Engineering and Control of Production Systems