Accession Number:

ADA142879

Title:

Formation of Silicide Contacts Using Codeposited Refractory Metals Alloy Films.

Descriptive Note:

Final technical rept. Jan-Dec 83,

Corporate Author:

TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD HAIFA (ISRAEL)

Personal Author(s):

Report Date:

1984-01-01

Pagination or Media Count:

33.0

Abstract:

Contact reactions of a Si substrate and thin films of co-deposited two refractory metals have been studied. Three systems have been chosen Ta-V, Ta-W and Ti-V. As reference also two bilayer structures for each system have been studied e.g. TaWSi and WTaSi for the Ta-W system. In each system the dependence of the interaction with Si on annealing temperature and on alloy composition is investigated. The interdiffusion and silicide formation have been analyzed by Auger electron spectroscopy and X-Ray diffraction. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Coatings, Colorants and Finishes

Distribution Statement:

APPROVED FOR PUBLIC RELEASE