Accession Number:

ADA142542

Title:

Study of Mechano-Chemical Machining of Ceramics and the Effect on Thin Film Behavior.

Descriptive Note:

Final technical rept. 1 Feb-31 Dec 83,

Corporate Author:

HONEYWELL INC BLOOMINGTON MN CORPORATE PHYSICAL SCIENCES CENTER

Personal Author(s):

Report Date:

1984-02-01

Pagination or Media Count:

48.0

Abstract:

Efforts have been made to mechanochemically polish polycrystalline Zr02, Nm-Zn ferrite, MgO, Al2O3, Si3N4, SiC, and B4C. Measurements were made of the removal rates obtained by mechanochemically polishing above materials on a polyurethane impregnated polyester lap using a colloidal silica slurry as a polishing medium. These measurements indicate that the colloidal silica slurry polishes oxide ceramics at significantly higher removal rates than non-oxide ceramics. It is shown that a polishing medium consisting of Cr2O3 can mechanochemically polish non-oxide ceramics at significantly higher removal rates than the colloidal silica slurry. Because of the reactive nature of colloidal silica slurries, they are typically used in conjunction with polyurethane impregnated polyester of polyurethane foam laps. Employment of such non-rigid laps yields polished surfaces with orange-peel appearance in the case of polycrystalline materials, excessive rounding at the edges and with flatness of no better than 1 lambda lambda 633nm per centimeter in the center. Employing rigid linen phenolic laps, we have been able to get mechanochemically polished surfaces with flatness of approx. lambda10 per centimeter, a little rounding at the edges and no orange-peel appearance.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Laminates and Composite Materials

Distribution Statement:

APPROVED FOR PUBLIC RELEASE