Accession Number:

ADA142408

Title:

Theoretical Studies of High Field, High Energy Transport in Gallium Arsenide, Silicon and Heterostructures,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

171.0

Abstract:

The study of high field transport has been instrumental to the theory of many semiconductor devices based on, e.g., the Hilsum-Ridley-Watkins mechanism, impact ionization phenomena, and recently real space transfer. A Monte Carlo simulation, including a pseudopotential band structure, is chosen for this study. It is shown in this study that this method can be applied to both the steady state and the transient state transport problems. Author

Subject Categories:

  • Numerical Mathematics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE