Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide.
ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB
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Single crystal silicon films have been grown on silicon dioxide covered silicon substrates by lateral epitaxy by seeded solidification using a scanned graphite strip heater. Various microscopy techniques have been used to establish that the films consist of large single crystal grains about 1 mm wide which extend indefinitely along the scan direction. These grains contain subgrain boundaries at about 25 micron intervals. The films are fairly smooth and show excellent single crystallinity. Boron and phosphorus implantations into these films have been studied by secondary ion mass spectrometry and Hall profiling. The diffusion properties of impurities in these films are similar to bulk silicon, the only differences being caused by the presence of the underlying silicon dioxide layer.
- Atomic and Molecular Physics and Spectroscopy