Accession Number:

ADA142382

Title:

Experimental Studies of Laterally Seeded Recrystallized Polysilicon on Silicon Dioxide.

Descriptive Note:

Technical rept.,

Corporate Author:

ILLINOIS UNIV AT URBANA COORDINATED SCIENCE LAB

Personal Author(s):

• Banerjee,S. K.

Report Date:

1983-07-01

Pagination or Media Count:

147.0

Abstract:

Single crystal silicon films have been grown on silicon dioxide covered silicon substrates by lateral epitaxy by seeded solidification using a scanned graphite strip heater. Various microscopy techniques have been used to establish that the films consist of large single crystal grains about 1 mm wide which extend indefinitely along the scan direction. These grains contain subgrain boundaries at about 25 micron intervals. The films are fairly smooth and show excellent single crystallinity. Boron and phosphorus implantations into these films have been studied by secondary ion mass spectrometry and Hall profiling. The diffusion properties of impurities in these films are similar to bulk silicon, the only differences being caused by the presence of the underlying silicon dioxide layer.

Descriptors:

• *SILICON DIOXIDE
• *RECRYSTALLIZATION
• *POLYSILICONS
• *SEEDING
• FILMS
• SINGLE CRYSTALS
• EPITAXIAL GROWTH
• SOLIDIFICATION
• IMPURITIES
• ION IMPLANTATION
• MICROSCOPY
• SILICON
• DIFFUSION
• BORON
• GRAIN BOUNDARIES
• MASS SPECTROMETRY

Subject Categories:

• Atomic and Molecular Physics and Spectroscopy

Distribution Statement:

APPROVED FOR PUBLIC RELEASE