Accession Number:

ADA142342

Title:

HgCdTe Surface and Defect Study Program.

Descriptive Note:

Interim technical rept.,

Corporate Author:

SANTA BARBARA RESEARCH CENTER GOLETA CALIF

Report Date:

1983-07-01

Pagination or Media Count:

157.0

Abstract:

This report presents results of the first six-months period of a three-year study of the surface and defects of HgCdTe. In an investigation of MIS interfaces using Photox Si02 on HgCdTe, effects of the choice of gate metal composition are presented. Contribution to flatband bias, measured by capacitance voltage, of insulator fixed charge is determined. Effect of water on interface electrical and mechanical properties are presented. Studies of the initial stages of oxidation of UHV cleaned HgCdTe using photoemission spectroscopy are presented. The effect of Hg bonding on ease of defect formation is discussed and using TEM, defects in bulk and LPE grown material are surveyed. Detailed calculations of s, p and hybrid sp3 energies are presented for Hg, Cd, Zn, Te, Se, and S. Bond energies of pure binaries and in the alloy are calculated. Trends are interpreted to show replacement of Cd by Zn stabilizing the alloy.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE