Accession Number:

ADA142126

Title:

Gallium Arsenide and Related Compounds, 1982; An International Symposium (10th) Held at Albuquerque, New Mexico on 19-22 September 1982.

Descriptive Note:

Final rept. 1 Jul 82-30 Jun 83,

Corporate Author:

CORNELL UNIV ITHACA NY

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

650.0

Abstract:

This is a volume of contributed papers delivered at the International symposium on Gallium Arsenide and Related Compounds. The technical program of the conference included sessions on bulk and epitaxial crystal growth, optoelectronic devices, microwave devices, ion implantation, and characterization. Improvements in the preparation of high purity undoped semi-insulating GaAs were reported, along with considerable discussion of the EL2 electron trap in this material. Advances in bulk InP growth and the growth of bulk III-V alloys were presented. Research on GaAs, InP, and alloy high frequency and optoelectronic devices demonstrated increasingly sophisticated structures, including modulation-doped heterostructure charge-coupled devices.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE