Ballistic Transport in Submicron Silicon Mosfets.
Final rept. 1 May 81-31 Dec 83,
CLEMSON UNIV SC DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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Recent improvements in the manufacturing of MOSFETs have reduced the minimum feature size and brought transistors with submicron geometries into being. For certain materials such as GaAs, gate lengths on the order of 0.2 micron are not comparable in length to the mean free path of the electrons in the channel at room temperature. It has been suggested that these electrons could cross the channel without suffering a collision, a phenomenon referred to as ballistic transport. For silicon devices the ballistic transport phenomenon might occur at cryogenic temperatures 4.2K where decreased scattering results in high low-field mobilities. We characterized submicron silicon MOSFETs down to 4.2K in the subthreshold, linear and saturation regimes. A 500um MOSFET was used as a comparison device. The measurements indicated that the effective channel mobility was inversely proportional to the ambient temperature, longitudinal field and transverse field.
- Electrical and Electronic Equipment
- Solid State Physics