Schottky Barrier Photoelectrodes with a Variable Barrier Height.
Final rept. 26 Sep 83-25 Mar 84,
EIC LABS INC NORWOOD MA
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The purpose of this research is to investigate the properties of Schottky barriers formed between semiconductors and ion insertion compounds having continuously and reversibly variable work functions. In Phase I, the diode p-SiMxWO3 M H, Li was studied. LixWO3 thin films, prepared by vacuum evaporation or sputtering, showed work functions spanning the range 4.2-5.2 eV for x 0 to 0.4. Electrical measurements on solid state diodes employing LixWO3 layers revealed a barrier height modulation of 0.06V for this range, limited by significant Fermi level pinning. Photoelectrochemical measurements of HxWO3 coated p-Si electrodes showed that the ion insertion compound enhanced electrode stability and photoresponse in acidic electrolytes. The band bending in naked and coated p-Si electrodes was measured as a function of applied bias using a new technique assessing saturation photovoltage as the electrode is polarized. The slope of these curves, dVBdV, is related inversely to the interface state density, Ds. Ds was significantly reduced by the HxWO3 overlayer. Author
- Electrical and Electronic Equipment
- Solid State Physics