High Resolution Measurements of Impurity-Induced Localized Vibrational Modes in Semiconductors.
Final scientific rept. 1 Mar 83-29 Feb 84,
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES ELECTRONIC SCIENCES LAB
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The recent measurements and study of the carbon-induced localized vibrational mode LVM in GaAs have demonstrated that nearest neighbor isotropic frequency shifts can be observed if one uses the high resolution capability of a Fourier transform infrared FITR spectrometer. One major importance of such measurements lies in the use of the shifts to determine the impurity site and the formation of complexes such as dimers. This feature has been used in a detailed study of the LVM infrared absorption of Si-doped GaAs. Samples electrically compensated by electron irradiation and by Li saturation were used in the study. Bands due to SiGa, SiAs, SiGa-SiAs, 7LiGa, and SiAs-AsGa or VGa were studied in high resolution. In several cases the structures observed in the high resolution measurements were compared with model calculations with generally satisfactory results.
- Solid State Physics