Molecular Beam Epitaxy of HgCdTe.
Final rept. 1980-1983,
GEORGIA INST OF TECH ATLANTA ENGINEERING EXPERIMENT STATION
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The design of a molecular beam epitaxial growth system for HgCdTe alloys is described and has been used to grow CdTe and HgCdTe layers. Investigations of the properties of these layers by reflection electron diffraction, u.v. reflectivity and X-ray diffraction measurements show that at present the quality of CdTe substrates andor surface preparation procedures cause an initial degradation of the quality of the layer, but that these defects can be grown out. For CdTe layers thicker than 5 microns, good quality surfaces are obtained. Epitaxial deposited CdTe has been shown to be remarkably adaptable and 111 orientated CdTe layers have been grown on 100 orientated GaAs and InP substrates. Mercury cadmium telluride layers with x-values between 0.9 and 0.17 were grown on these CdTe buffer layers and demonstrated good crystal quality with spectral response characteristics extending out to 10 microns at 300K. Author