Accession Number:
ADA141381
Title:
Semiconductors Investigated by Time Resolved Raman Absorption and Photoluminescence Spectroscopy Using Femtoseond and Picosecond Laser Techniques.
Descriptive Note:
Progress rept. 1 Dec 82-1 Jan 84,
Corporate Author:
CITY COLL NEW YORK INST FOR ULTRAFAST SPECTROSCOPY AND LASERS
Personal Author(s):
Report Date:
1984-03-01
Pagination or Media Count:
10.0
Abstract:
We report on the research performed during the period 1982-1983 under the auspices of AFOSR. The research effort follows two directions 1 laser development subpicosecond laser, application of anti-resonant cavity to Ndglass, study of the emerald laser, and study of a new mode-locking dye for shorter pulses. 2 Time-resolved fluorescence and absorption studies of CdCr2Se4, GaAs and Ga0,5In0.5P with the goal to understand the interaction and kinetics of photogenerated carriers and basic assignments of the valence-conduction band transitions CdCr2Se4. We have also investigated the dynamics of semi-insulating CdSe. Finally we have continued the research on radiation damage neutrons and protons in CdSe and GaAs. Author
Descriptors:
- *Raman spectroscopy
- *Laser applications
- *Semiconductors
- Absorption spectra
- Photoluminescence
- Neodymium lasers
- Glass lasers
- Laser cavities
- Kinetics
- Radiation damage
- Plasmas(Physics)
- Holes(Electron deficiencies)
- Dye lasers
- Mode locked lasers
- Fluorescence
- Absorption
- Cadmium
- Chromium
- Selenium
- Gallium arsenides
- Gallium
- Indium phosphides
- Kinetics
- Charge carriers
- Valence bands
Subject Categories:
- Lasers and Masers
- Atomic and Molecular Physics and Spectroscopy
- Optics
- Solid State Physics