Superconducting Electronic Film Structures.
Annual rept. 1 Jan-31 Dec 83
WESTINGHOUSE RESEARCH AND DEVELOPMENT CENTER PITTSBURGH PA
Pagination or Media Count:
Single crystal NbN films were prepared on sapphire having a 2,-1,-1,3 surface orientation. Electron diffraction and Laue data show that the NbN and sapphire orientations are related, proving epitaxial growth. A15 structure V-Si and for the first time A15 Nb-Ge films were prepared reproducibly by a reactive sputtering process. These compounds were formed at temperatures as low as 500 C with critical temperatures above 12K. Niobium films were prepared at less than 100 C with critical temperatures greater than 9K. Epitaxial quality A15 Nb-Ir single crystal substrates were prepared. A new magnetron sputtering system was implemented. Progress on the assembly and implementation of a MBE-type deposition and in situ analytical facility is reported. Author
- Electricity and Magnetism
- Solid State Physics