Accession Number:
ADA139930
Title:
Low Power Radiation Hard GaAs RAM
Descriptive Note:
Semi-annual technical rept. 10 Jun 1982-9 Dec 1983
Corporate Author:
ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER
Personal Author(s):
Report Date:
1984-03-01
Pagination or Media Count:
35.0
Abstract:
The scope of this program is to demonstrate a 1K GaAs static RAM having very low power dissipation, 1 micro Wbit in standby, and a short access time, 10 ns, to meet the requirements of the DARPA Advanced On-Board Signal Processor AOSP. In the six month period covered by this report the initial processing of the 1K RAM arrays was begun. Testing of several lots revealed a mask error which is currently being corrected. The isolation studies for ultra- low power devices continued with major emphasis on isolation degradation following the Schottky metal process. A theoretical formulation for the leakage behavior of GaAs substrates was initiated, and good agreement between theory and the experimental data was obtained. Upset measurements have been made on a number of 256 bit RAMs using an Am-241 alpha particle source. The numerical value for the failure cross section was found to be similar in magnitude to the area of the Schottky barrier speed-up capacitor, suggesting that the capacitor is primarily responsible for the magnitude of the upset cross section. Single event upset measurements have also been carried out using 40 meVprotons at the NRL cyclotron facility. The results for this case also demonstrated a lower upset cross section for RAMs fabricated without the n- layer in the speed-up capacitor. A conceptual design of a new RAM mask set was begun in order to evaluate a wider range of RAM cell configurations. Both 256 and 1K bit arrays are being considered, and emphasis will be placed both on cell designs for enhanced yield and radiation hardness. Enhancementdepletion devices will also be incorporated into the design.
Descriptors:
- *CELLS
- *GALLIUM ARSENIDES
- *IONIZING RADIATION
- *MEMORY DEVICES
- *RADIATION HARDENING
- ACCESS TIME
- ALPHA BOMBARDMENT
- AMERICIUM
- AUGMENTATION
- BEHAVIOR
- CONFIGURATIONS
- CROSS SECTIONS
- CYCLOTRONS
- DEPLETION
- DISSIPATION
- ERRORS
- FACILITIES
- FAILURE
- FORMULATIONS
- LOW POWER
- MASKS
- NUMERICAL ANALYSIS
- ONBOARD
- RADIATION
- SCHOTTKY BARRIER DEVICES
- SIGNAL PROCESSING
- STATICS
- SUBSTRATES
- VALUE
Subject Categories:
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products
- Solid State Physics