Accession Number:

ADA139820

Title:

Investigation of Charge Coupled Devices for Signal Processing.

Descriptive Note:

Final technical rept. 1 Jan 81-30 Sep 83,

Corporate Author:

ILLINOIS UNIV AT URBANA DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1984-02-01

Pagination or Media Count:

18.0

Abstract:

New constant capacitance voltage transient methods are developed. Traps from ion implantation damage are profiled and characterized. New methods of determination of both majority and minority carrier capture rates at traps in one diode is developed. Two-dimensional numerical analyses with new boundary equations are demonstrated for micron and submicron silicon MOS devices. Dangling bound and hydrogen bonding of interface states and bulk dopant acceptor boron traps are experimentally demonstrated. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE