Accession Number:

ADA139758

Title:

Undoped Buffer Layer Development.

Descriptive Note:

Final technical rept. 1 Mar 81-31 Mar 83,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1984-01-01

Pagination or Media Count:

59.0

Abstract:

This program focused on the growth and analysis of epitaxial layers using three different techniques which have been successful in producing high purity, high mobility, epilayer material for device applications. These included molecular beam epitaxy MBE, metalorganic chemical vapor deposition MOCVD, and vapor phase epitaxy. Application of characterization techniques such as SIMSSecondary Ion Mas Spectrometry, infrared absorption, photoluminescence, deep level transient spectroscopy, and photoconductivity has allowed progress to be made in understanding the major deep impurity centers in semi-insulating epitaxial GaAs. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE