Accession Number:

ADA139678

Title:

LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing. Appendix B. Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits.

Descriptive Note:

Final rept. 25 Jul 1980-30 Sep 1982

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Report Date:

1984-01-01

Pagination or Media Count:

130.0

Abstract:

This report summarizes the research carried out at North Carolina State University in support of the Rockwell International Program on LSI-VLSI Ion Implanted Planar GaAs IC Processing. The major thrust of the program at NCSU was to develop accurate computer models for analyzing the performance of short- channel GaAs MESFET devices as used in the Rockwell VLSI circuits. The modeling research is divided into three parts 1 Two-dimensional finite difference simulation, 2 Two-dimensional Monte Carlo analysis, and 3 Analytical modeling. The intent was to use the two-dimensional analyses to give exact solutions to the device operation and to serve as a guide for developing a simpler, and less expensive, analytical model of sufficient accuracy to be valuable as a design aid and to study effects of parameter changes.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE