Accession Number:

ADA139676

Title:

LSI/VLSI (Large Scale Integration/Very Large Scale Integration) Ion Implanted GaAs (Gallium Arsenide) IC Processing

Descriptive Note:

Final rept. 25 Jul 1980-30 Sep1982

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA MICROELECTRONICS RESEARCH AND DEVELOPMENT CENTER

Personal Author(s):

Report Date:

1984-01-01

Pagination or Media Count:

147.0

Abstract:

This report covers a program designed to realize the full potential of GaAs integrated circuits by expanding and improving fabrication and material techniques. The main accomplishment of the program was the successful implementation of the fabrication of integrated circuits on 3-inch diameter GaAs wafers. In addition, this program covered many activities related to GaAs IC processing. These include work on semi-insulating material growth and characterization, investigation of ion implantation techniques work carried out at the California Institute of Technology evaluation of device uniformity, and investigation of its controlling factors investigation of metallization yield and reliability, and improvements of processing techniques resulting from this study design and testing of a multiplier and programmable shift registers pattern generators evaluation of mask programmable logic arrays to meet ERADCOMs needs for high performance communication systems investigation of the hardness of GaAs ICs to total dose and transient ionizing radiation, and modelling of MESFET devices this work carried out at North Carolina State University.

Descriptors:

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE


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