Accession Number:

ADA139412

Title:

Micro-Reactions of Metal Contacts on Various Types of GaAs Surfaces.

Descriptive Note:

Annual technical rept. no. 1, Jan 83-Jan 84,

Corporate Author:

TECHNISCHE HOCHSCHULE DARMSTADT (GERMANY F R) INST FUER HOCHFREQUENZTECHNIK

Personal Author(s):

• Hartnagel,H. L.
• Huber,E.
• Kretschmer,K. H.
• Roehkel,K.
• Wuerfl,J.

Report Date:

1984-01-01

Pagination or Media Count:

80.0

Abstract:

An XPS and ISS analysis of a range of GaAs surfaces is reported which are produced by various technological steps such as etching in basic or acidic solutions as costumary before the deposition of metals. Studies on the light emission for reverse biassed Schottky contacts has resulted in a better understanding of the influence of preevaporation etchants on this emission. First results of lateral material transport between co-planar electrodes and on Metal-GaAs interdiffusion due to typical operational device conditions are presented. Author

Descriptors:

• *Metal contacts
• *Schottky barrier devices
• *Gallium arsenides
• Surface properties
• Surface chemistry
• Etching
• Solutions(Mixtures)
• Deposition
• Transport properties
• Junctions
• Electric current
• Metallizing
• Field effect transistors

Subject Categories:

• Physical Chemistry
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE