Accession Number:

ADA139192

Title:

Infrared Response of Impurity Doped Silicon MOSFET's (IRFET'S)

Descriptive Note:

Final technical rept. 1 Aug 1974-1 Aug 1976

Corporate Author:

ARKANSAS UNIV FAYETTEVILLE DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1976-08-01

Pagination or Media Count:

148.0

Abstract:

Operation and characteristics of the impurity doped infrared sensing MOSFET IRFET are described. Responsivities of over 1000 ampsjoule have been observed with only small channel width to length ratios and large area devices. Much higher responsivities would be possible with smaller area devices. In the case of indium- and gallium-doped devices it has been shown that quantum efficiencies in the range 1.0 to 10.0 can be achieved by using substrates with low boron dopings. The infrared sensing MOSFETIRFET is a detector, integrating element, and amplifier all combined in one device structure. As such it is distinctly different than other types of infrared detectors and possesses many very unique characteristics. When compared to charged coupled device scanned photoconductors two of these are the responsivity of the IRFET and uniformity of responsivity do not depend upon carrier life-time and residual impurity concentrations and 2 the IRFET has a nondestructive D.C. or static memory type readout as opposed to the A.C. or dynamic memory type of CCDs. This report describes in detail the experimental results obtained on gold-, indium-, and gallium-doped devices for use in the near, middle, and far infrared wave length regions respectively. Equations describing the operation of the devices have been compared to the observed thermal and optical response characteristics.

Subject Categories:

  • Numerical Mathematics
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE