Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.
Annual technical rept. 1 Sep 82-31 Aug 83,
NORTH CAROLINA STATE UNIV RALEIGH DEPT OF MATERIALS ENGINEERING
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Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. Author
- Solid State Physics