Accession Number:

ADA139179

Title:

Fundamental Studies of Growth, Doping and Transformation in Beta Silicon Carbide.

Descriptive Note:

Annual technical rept. 1 Sep 82-31 Aug 83,

Corporate Author:

NORTH CAROLINA STATE UNIV RALEIGH DEPT OF MATERIALS ENGINEERING

Personal Author(s):

Report Date:

1983-08-31

Pagination or Media Count:

57.0

Abstract:

Semiconductor quality beta-SiC thin films are currently being grown for future microelectric applications using CVD techniques. Research in this period has included initial ion implantation studies coupled with annealing and ion microprobe analyses of the resulting implant profiles. An indepth study of the converted layer formed by the reaction of C2H4 with the Si substrate is also included in this report. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE