Accession Number:

ADA137849

Title:

Studies of III-V Compound Semiconductors for Optical and Microwave Applications.

Descriptive Note:

Final rept. 15 Jun 80-31 Aug 83,

Corporate Author:

CALIFORNIA UNIV BERKELEY

Personal Author(s):

Report Date:

1984-01-02

Pagination or Media Count:

12.0

Abstract:

Compound semiconductors of GaAs and GaAl As were studies for optical and microwave applications. Two growth processes were employed for device fabrication 1 the liquid-phase epitaxy LPE and 2 the molecular beam epitaxy MBE. The procedure for LPE growth was well established in the laboratory. On the other hand, the MBE growth process required a considerable amount of effort to establish the growth procedure and optimize the growth conditions. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE