Accession Number:
ADA137849
Title:
Studies of III-V Compound Semiconductors for Optical and Microwave Applications.
Descriptive Note:
Final rept. 15 Jun 80-31 Aug 83,
Corporate Author:
CALIFORNIA UNIV BERKELEY
Personal Author(s):
Report Date:
1984-01-02
Pagination or Media Count:
12.0
Abstract:
Compound semiconductors of GaAs and GaAl As were studies for optical and microwave applications. Two growth processes were employed for device fabrication 1 the liquid-phase epitaxy LPE and 2 the molecular beam epitaxy MBE. The procedure for LPE growth was well established in the laboratory. On the other hand, the MBE growth process required a considerable amount of effort to establish the growth procedure and optimize the growth conditions. Author
Descriptors:
- *Semiconductors
- Optical equipment
- Microwave equipment
- Gallium arsenides
- Aluminum
- Epitaxial growth
- Liquid phases
- Molecular beams
- Semiconductor devices
- Fabrication
- Stabilization
- Semiconductor lasers
- Tunable lasers
- Frequency
- Switching
- Control
- Optical waveguides
- Pulse compression
- Semiconducting films
- Field effect transistors
- Optical communications
Subject Categories:
- Electrical and Electronic Equipment
- Lasers and Masers
- Solid State Physics