Accession Number:

ADA137243

Title:

Growth of HgCdTe by Modified Molecular Beam Epitaxy

Descriptive Note:

Final rept. 11 Feb 1979-1 Mar 1983

Corporate Author:

ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s):

Report Date:

1983-12-01

Pagination or Media Count:

75.0

Abstract:

Laser assisted deposition was applied successfully to thin film growth of three materials HgCdTe, CdTe and ZnO. For HgCdTe, congruent evaporation was induced by pulsed laser irradiation. Epitaxial Hg0.7Cd0.3Te layers up to 15 micrometers thick were grown on 111 CdTe substrates at 120 C in .0001 Torr of Hg backpressure from a single evaporation source. Materials were characterized structurally and electrically. The as-grown layers were n- type. After 410 C annealing, they were converted to p-type. np implanted photodiodes were demonstrated. Very high quality 111 CdTe100 GaAs heteroepitaxy was demonstrated. The growth rate was as high as 12 micrometers hr. The layers were characterized with x-ray, photoluminescence, UV reflectance and transmission electron microscopy and found to have very high crystalline quality. Zn0 films were grown on a large variety of substrates using a pulsed C02 laser. The substrate temperature were only 250 C, the films were highly oriented and uniform. They were also piezoelectric. Surface and acoustic wave transducers were demonstrated. Coupling coefficient superscript 2 was found to be 0.005.

Subject Categories:

  • Lasers and Masers
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE