GaAs Gigabit Monolithic Optoelectronic Transmitter.
Final rept. Jul 81-Aug 83,
HONEYWELL CORPORATE TECHNOLOGY CENTER BLOOMINGTON MN
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The objective of this program was to develop the Technologies required to monolithically integrate a high performance AlGaAs laser diode with high speed digital GaAs circuitry. This objective was met with the demonstration of a fully integrated optoelectronic transmitter consisting of a Transverse junction stripe TJS laser diode, a power driver transistor, and a 41 multiplexer. This demonstration is the first major step in the development of high speed optical interconnects for future digital systems operating a gigabit second data rates.
- Electrooptical and Optoelectronic Devices
- Solid State Physics