Development of a Planar Heterojunction Bipolar Transistor for Very High Speed Logic.
Annual technical rept. 1 Oct 82-30 Sep 83,
CALIFORNIA UNIV SANTA BARBARA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING
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The objective of this project was to fabricate multiple heterostructure bipolar transistors in semi-insulating GaAs substrates. During the first year of effort, molecular beam epitaxial growth of doped aluminum-gallium arsenide AlGaAs gallium arsenide GaAs heterojunctions was carried out. GaAs layers were doped n-type with silicon from the background 1E16 up to 2E18 and p-type with beryllium up to 1E19. N-type AlGaAs was grown up to 30 aluminum composition and doped with silicon to 1.5E18. Tools were developed for lateral structuring of transistors such as beryllium ion implantation, reactive sputtering and thermal annealing. Single devices were grown, fabricated by mesa etching and tested. Current-voltage characteristics shows evidence of excess recombination current. Author
- Electrical and Electronic Equipment