Ion Beam Assisted Deposition of SiO2.
Final rept. 1 Apr-31 Dec 82,
NEW MEXICO UNIV ALBUQUERQUE INST FOR MODERN OPTICS
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A Kaufman ion source was modified to produce a low energy 30 eV high current density 3 mAsq cm 0 and 02 02 ion beam at an optical surface being coated with Si02. Films of Si02 were deposited with 002 ion bombardment at low energy 30 eV and at high energy 500 eV. Application of the ion-assist technique has the following features 1 Durable coatings can be produced at low substrate temperature 2 Film stoichiometry is improved, particularly for low energy bombardment 3 Hydrogen content of the film is reduced under certain conditions of bombardment and 4 Stress and structure of Si02 films are not greatly affected by ion bombardment. Author
- Coatings, Colorants and Finishes
- Particle Accelerators