Fundamental Radiation Damage Processes in Silicon.
LEHIGH UNIV BETHLEHEM PA
Pagination or Media Count:
This program has been aimed at detemining and understanding the fundamental properties of simple lattice point defects in semiconductors. The specific purpose has been to determine the electronic properties of the defects, to understand the mechanisms by which they are formed or incorporated into the lattice, and to probe the processes by which they can migrate through the lattice and react with other defects to form complexes. The major emphasis has centered on silicon. As the simplest and best understood semiconductor, silicon provides the best hope of clean, unambiguous and generally applicable answers to these questions.
- Solid State Physics