Investigation of Metallic Impurities Introduced into SiO2
Mid-term technical rept. 1 Sep 1982-31 Sep 1983
STANFORD UNIV CA
Pagination or Media Count:
This report contains the theoretical development of a model that describes the diffusion of interstitial diffusors in Si02. Experimental data supporting this model and the implications and conclusions predicted by this model are presented. In summary this model concludes that Pd, Au, Ta, W, Pt, Ti, and Al are potential candidates for use in VLSI gate metalization schemes, where as Ag, Cu, Na, Ni, Mn, Fe, Mg, and Ga are unsuitable.
- Physical Chemistry
- Solid State Physics