Accession Number:

ADA136008

Title:

Investigation of Metallic Impurities Introduced into SiO2

Descriptive Note:

Mid-term technical rept. 1 Sep 1982-31 Sep 1983

Corporate Author:

STANFORD UNIV CA

Personal Author(s):

Report Date:

1983-09-30

Pagination or Media Count:

73.0

Abstract:

This report contains the theoretical development of a model that describes the diffusion of interstitial diffusors in Si02. Experimental data supporting this model and the implications and conclusions predicted by this model are presented. In summary this model concludes that Pd, Au, Ta, W, Pt, Ti, and Al are potential candidates for use in VLSI gate metalization schemes, where as Ag, Cu, Na, Ni, Mn, Fe, Mg, and Ga are unsuitable.

Subject Categories:

  • Physical Chemistry
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE