Accession Number:

ADA135937

Title:

Development of High Purity InP Crystals.

Descriptive Note:

Final rept. Sep 82-Sep 83,

Corporate Author:

CRYSTACOMM INC MOUNTAIN VIEW CA

Personal Author(s):

Report Date:

1983-09-01

Pagination or Media Count:

14.0

Abstract:

Large diameter, 1 kg in weight, high purity polycrystalline and 100 oriented InP single crystals can be routinely prepared, with background carrier concentrations of 2-4x10 to the 15th powercc and room temperature mobilities in excess of 4000 sq cmv-sec. The large diameter Approx. 3 in., 100 oriented undoped single crystals have unusually low dislocation densities. Sulfur doped crystals are practically dislocation free.

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE