Investigation of the Basic Mechanisms of Radiation Effects on Electronics and Development of Radiation Hardening Procedures. Volume 1
Final Rept. 1 Jan 1981-1 Jan 1982
NORTHROP RESEARCH AND TECHNOLOGY CENTER PALOS VERDES PENINSULA CA
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This report describes results of a study of radiation effects on electronic materials, devices, and integrated circuits. Emphasis is placed on determining the basic mechanisms of the interaction of radiation with these materials and components with a view toward gaining understanding of benefit to developers of radiation-tolerant devices. Results of analytical and experimental studies of the mechanisms of neutron effects on VLSI structures are presented. The issue of whether a single neutron-produced defect cluster can produce a significant amount of permanent damage hand error in a VLSI cell is addressed. The results obtained suggest that hard errors may occur at relatively modest neutron fluences. An experiment using a scanning electron microscope was initiated in which an attempt is being made to observe individual defect clusters through their effect on carrier recombination. Thermally stimulated current measurements have been performed on irradiated Si0 sub 2 films in order to obtain basic mechanisms information regarding the nature of hole traps at the Si0 sub 2-Si interface. A hole trap distribution ranging in energy with respect to the valence band from 9.7 to 1.3 eV was found, with energy peaks at 0.9 and 1.1 eV being tentatively assigned. An investigation of the effects of ionizing radiation on mercury cadmium telluride MIS devices has been performed. The net charge buildup measured in these devices following 77 K irradiation is attributed to the charge trapped in the interfacial region between the insulating film and the HgCdTe substrate.
- Electrical and Electronic Equipment
- Solid State Physics