Heterojunction Solid-State Devices for Millimeter-Wave Sources.
Final rept. 1 Sep 80-31 Aug 83,
NORTH CAROLINA STATE UNIV RALEIGH DEPT OF ELECTRICAL ENGINEERING
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The use of compound semiconductor and heterojunction devices as millimeter-wave sources through 100 GHz has been investigated. Both IMPATT and MESFET type devices have been considered. A series of comprehensive and accurate theoretical device models have been developed and utilized in this investigation. Both equilibrium and nonequilibrium transport effects have been investigated. Prototype IMPATT device structures have been fabricated in GaAs and GaInAsInP. Author
- Electrical and Electronic Equipment
- Solid State Physics