Accession Number:

ADA135353

Title:

Electron Ballistic Effects in III-V Semiconductors.

Descriptive Note:

Final rept. 25 Sep 80-24 Sep 83,

Corporate Author:

MINNESOTA UNIV MINNEAPOLIS DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1983-11-01

Pagination or Media Count:

9.0

Abstract:

The purpose of this three-year research program was to study electron transport in III-V semiconductors, starting with an investigation of ballistic transport in GaAs. Also for experimental studies of electron transport in the III-V semiconductors, test devices were to be constructed from submicron layers grown by molecular beam epitaxy. For ballistic electron transport in submicron GaAs devices, the influence of the boundary conditions were explained, a theory for low-field diode conductance was developed, the high-field diode impedance was calculated, and experimental data was compared to theoretical predictions. This work led to an investigation, both experimental and theoretical, of electron transport in the two-dimensional electron gas TEG of a modulation-doped heterostructure. The theoretical studies produced a model of electron transport in GaAsAlGaAs modulation-doped structures and prediction of the electron mobility in TEG layers. The experimental work led to a new method of III-V heterojunction characterization and to an explanation of the temperature dependent behavior of a modulation-doped transistor.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE