Studies of Silicon Refractory Metal Interfaces: Photoemission Study of Interface Formation and Compound Nucleation.
Final rept. 15 Jul 81-14 Apr 83,
Pagination or Media Count:
Examined are the electronic and morphological interactions which occur at the interface between silicon and a variety of metals, including Cr, Ti, Sm, Au, and Ca. These interface studies were supported by extensive synchrotron radiation photoemission studies of bulk silicides, including Ti2Si5, TiSi2, VSi2, NbSi2, CrSi2, MoSi2, TaSi2, FeSi2, CoSi2, Ni2Si, NiSi, NiSi2, and Pd2Si and by calculations of the density of states of silicides. Identified are the important parameters in the formation of the metal-silicon bond. Demonstrated is the systematic development of the Si-metal p-d hybridization and the reduction of the Si sp3 bond.
- Physical Chemistry
- Metallurgy and Metallography