GaAs FET Logic at Low Temperatures.
Final technical rept. 1 Sep 79-31 Aug 82,
TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
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This report covers progress made to investigate thee speed advantage associated with the operation of GaAs integrated circuits at low temperatures 77 K. The work was carried out in conjunction with a TI internally-funded program to develop a viable, room-temperature, high-speed GaAs logic technology. In Section II, material development is discussed. Process development and circuit development are discussed in Sections III and IV, respectively. The principal results of this investigation, the temperature characteristics of GaAs MESFET devices and circuits, are described in Section V.
- Electrical and Electronic Equipment
- Solid State Physics