Accession Number:

ADA134911

Title:

Ion Implanted GaAs I.C. Process Technology

Descriptive Note:

Quarterly technical rept. no. 3, 1 Dec 1977-28 Feb 1978

Corporate Author:

ROCKWELL INTERNATIONAL CORP THOUSAND OAKS CA SCIENCE CENTER

Report Date:

1978-04-01

Pagination or Media Count:

68.0

Abstract:

This report covers the third quarter of a GaAs gallium arsenide integrated circuit IC program. The purpose is to develop an ion implanted planar process technology for GaAs ICs with the goal of developing LSI large scale integration capability in a short period of time. The fabrication approach is based on multiple localized implantations directly into the semi- insulating GaAs substrate to form device areas insulated by the unimplanted regions of the substrate. A new circuit concept involving a combination of Schottky diodes and depletion mode Schottky barrier FETs field effect transistors is being employed to form logic gates capable of high speed and very low power operation.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE