S-I-S mm-Wave Mixers and Detectors.
SPERRY RESEARCH CENTER SUDBURY MA
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This program is an effort to achieve the ultimate goal of fabricating refractory superconducting S-I-S mixer devices for operation in mm-wave receivers in the quantum mode and in the 8-10 K temperature range. The following progress has been made toward the above goal 1 development of in-house capability of depositing niobium carbonitride films Nb x Ny of device quality with transition temperatures to approx. 16 K 2 development of NbCxNyaSiNb and NbCxNyGeNb devices of very high quality 3 fabrication and successful operation of niobium based S-I-S mixer chips and 4 fabrication and evaluation of aSi and Ge barrier all-NbCxNy devices. NbCxNyGeNb devices have been fabricated with chemical vapor deposited CVD polycrystalline arsenic-doped germanium barriers. All-Nb-S-I-S mixer chips were fabricated and sent to Goddard Institute for Space Studies to be evaluated. The noise temperature was approx. 60 K and the conversion loss of 5 dB. These results are comparable to Pb alloy junction results. A second-generation mixer was designed by GISS.
- Electrical and Electronic Equipment
- Electricity and Magnetism
- Solid State Physics