Lithography Radiation Effects Study.
Interim rept. 20 Nov 80-20 May 82,
SPIRE CORP BEDFORD MA
Pagination or Media Count:
An experimental x-ray lithography facility for irradiation thin films of a photoresist next to a gold mask is described. The x-ray irradiance and PMMA irradiation times are estimated for several target elements with characteristics x-ray lines in the 1-3 KeV energy range. Gold masks deposited with films of carbon 100, 220, 520 and 710 Angstroms thick were placed next to films of PBS resist and irradiated with x-rays from Al, Ag, and Ti targets bombarded by 10 KeV electrons. The exposed PBS was etched for a fixed time interval, and the thickness of the etched resist next to the varying film thicknesses of carbon was measured by optical ellipsometry. The plot of etched PBS thickness vs carbon film thickness gave a measure of the depth of penetration of x-ray photoelectrons from the fold mask into the resist and a possible method of measuring dose-depth profiles at material interfaces at soft x-ray energies. Author
- Electrooptical and Optoelectronic Devices
- Test Facilities, Equipment and Methods
- Printing and Graphic Arts