Assessment of the Potential of Langmuir-Blodgett Films for Room Temperature IR (Infrared) Detectors
Technical rept. 7 Jan-30 Sep 1983
BDM CORP MCLEAN VA
Pagination or Media Count:
Langmuir-Blodgett films possess high dielectric breakdown voltages and induce low surface state densities on semiconductor surfaces. These properties are valuable for surface passivation in manufacture of infrared detectors. It was suggested that these properties might be exploited in the fabrication of mercury cadmium telluride IR detectors that could operate at room temperature. However, examination of the temperature dependence of the fundamental thermal noise sources in LWIR detectors indicate that these are characteristic of bulk properties and even detectors made with high quality materials high purity, high crystalline perfection must be cooled to the vicinity of liquid nitrogen temperature to achieve background limited operation. Better passivation would reduce lf noise in some device configurations and reduce leakage current in junction devices permitting higher RA products at below liquid nitrogen temperatures for low background operation.
- Infrared Detection and Detectors
- Solid State Physics