Accession Number:

ADA134122

Title:

Proceedings of the Molecular Beam Epitaxy Workshop (4th) Held at Urbana, Illinois on 21-22 October 1982,

Descriptive Note:

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMPAIGN

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

92.0

Abstract:

The Proceedings of the Fourth Molecular Beam Epitaxy Workshop Include Summary Abstract Recent developments in MBE and summary of the MBE conference in Japan A review of recent advances in semiconductor superlattices Heterostructure bipolar transistors What should we build Use of molecular beam epitaxy in research and development of selected high speed compound semiconductor devices Growth of refractory oxide films using solid oxygen sources in a molecular beam epitaxy apparatus Two-stage arsenic cracking source with integral getter pump for MBE growth On the possibility of MBE growth interface modification by hydrogen Substrate rotation-induced compositional oscillation in molecular beam epitaxy MBE Summary Abstract Segregation of As observed on clean, cleaved GaAs110 surfaces Enhanced optical nonlinearities in superlattices Optical properties of GaSb-AlSb superlattices AlAs-GaAs superlattices for optimum photoluminescence intensity Examination of MBE GaAs Al0.3 Ga0.7As superlattices by Auger electron spectroscopy and Autocompensation in molecular beam epitaxial gallium arsenide The 110orientation.

Subject Categories:

  • Information Science
  • Atomic and Molecular Physics and Spectroscopy
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE