Point-by-Point Matrix Effect Calibration for the Quantitative Analysis of Layered Semiconductors by Secondary Ion Mass Spectrometry.
Interim technical rept.,
CORNELL UNIV ITHACA NY DEPT OF CHEMISTRY
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Point-by-point matrix effect calibration is applied to a variety of AlxGa1-xAs multilayer-multimatrix samples grown by molecular beam epitaxy. The procedure uses the linear dependence of secondary ion yields and sputtering yields on matrix composition to quantify depth profiles through matrix gradients and interfaces. The proposed method provides accurate results in the analysis of samples too complex for conventional quantitative analysis by secondary ion mass spectrometry. Author
- Atomic and Molecular Physics and Spectroscopy
- Solid State Physics