Statistical Simulation of GaAs MESFETS.
Final scientific rept. 1 Mar 82-31 Jul 83,
TOLEDO UNIV OH DEPT OF ELECTRICAL ENGINEERING
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A method has been developed for the statistical simulation of gallium arsenide metal semiconductor field effect transistors. Simulated device parameter distributions were compared with measured parameter distributions using the Kolmogorov-Smirnov test. By adjusting the individual input parameter in a trial and error process, an acceptable simulation was obtained for the parameter distributions of five different devices. The correlation coefficients between device parameters produced in the simulation were acceptable except for one parameter. A set of equations was derived for computing the parameters of the Curtice GaAs MESFET model in terms of six standard measured device parameters. A comparison of simulated and measured Curtice model parameters for the five devices did not indicate an acceptable match. Author
- Electrical and Electronic Equipment
- Numerical Mathematics