Study of 1/f Noise in Solids.
Annual rept. 16 Jun 82-15 Jun 83,
FLORIDA UNIV GAINESVILLE DEPT OF ELECTRICAL ENGINEERING
Pagination or Media Count:
Noise measurements were made on gold metal films. The noise above 150K is of the form 1f to the 1.2 power below 150K the noise goes as 1f with a maximum near 80K, then a continued decrease. The noise in GaAs nn-n mesas of submicron dimensions is very low. The Hooge parameter is of the order of 10 to the minus 7th power, indicating that collisions are nearly absent. Intervally electron transfer is noticeable in samples with 1.1 micrometer dimensions. The np-n structures have a great deal of noise associated with the prepunch-though current. This is attributed to recombination of injected electrons via empty acceptors, since in the unexcited specimen there are no holes due to electron spillover. For the first time 1f noise was observed in radioactive alpha particle decay from 241 Americium. This noise was deduced from counting statistics using the Allan variance theorem. Calculations yielded quantitative accounts for the mobility-fluctuation noise associated with impurity scattering for silicon and gold.
- Solid State Physics