Accession Number:



Integration of Detectors with Optical Waveguide Structures.

Descriptive Note:

Interim technical rept. 15 Mar 82-14 Mar 83,

Corporate Author:


Personal Author(s):

Report Date:


Pagination or Media Count:



Progress in several areas regarding the integration of photodetector arrays with optical waveguide structures is presented. A photosensor element suitable for incorporation into charge-coupled device CCD imaging arrays in which the charge injected into the CCD is proportional to the logarithm of incident light intensity has been successfully demonstrated. The photosensor element consists of a photodiode directly coupled to a two stage MOSFET common source amplifier. This element occupies an area of 25 micron x 100 micron and is arranged so that it could be incorporated into a linear CCD imaging array having a period of 25 micron. A logarithmic response is measured over a 68.6 dB range of incident light intensity with a sensitivity of 55 mV per decade of light intensity. The concept of illuminating a silicon photodetector along an edge to increase the light propagation path through the depletion region and thus to increase quantum efficiency at near infrared wavelengths has also been successfully demonstrated. Quantum efficiency measurements using both a GaAlAs laser and a HeNe laser are included. These measurements show an improvement in quantum efficiency at lambda 0.83 micron for edge illumination over normal incidence of 75 for a photodiode and of 142 for a MOS capacitor photosensor.

Subject Categories:

  • Electrical and Electronic Equipment
  • Fiber Optics and Integrated Optics
  • Solid State Physics

Distribution Statement: