Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices
Final technical rept. 1 Dec 1980-30 Nov 1982
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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The papers enclosed with this report include a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SIO2 films.
- Electrical and Electronic Equipment
- Solid State Physics