Accession Number:

ADA133674

Title:

Study of the Physics of Insulating Films as Related to the Reliability of Metal-Oxide Semiconductor Devices

Descriptive Note:

Final technical rept. 1 Dec 1980-30 Nov 1982

Corporate Author:

IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY

Report Date:

1983-08-01

Pagination or Media Count:

250.0

Abstract:

The papers enclosed with this report include a new method for studying hot electron energy distributions in SiO2, plasma enhanced chemical vapor deposition of Si-rich SiO2, the use of Si-rich SiO2 to greatly reduce electron trapping effects, the use of Si-rich SiO2 to increase the yield of thin film capacitors, ellipsometry measurements of polycrystalline silicon films and the use of a delay time technique to measure the diffusion of the oxidant in SIO2 films.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE