Accession Number:

ADA133593

Title:

Evaluation of Radiation Damage to Metal-Oxide-Semiconductor (MOS) Devices.

Descriptive Note:

Corporate Author:

GEO-CENTERS INC NEWTON UPPER FALLS MA

Personal Author(s):

Report Date:

1982-12-01

Pagination or Media Count:

10.0

Abstract:

The purpose of these experiments was to provide qualitative and quantitative information on the effects of various hydrogen and nitrogen annealing treatments on the radiation hardness, or resistivity to damage, of MOS capacitors. Toward this end, the following tasks were performed Construction of capacitor TO-5 packages for device evaluation The experimental determination of the 1 MHz capacitance-voltage bias curves for both the pre- and post-irradiated capacitors Evaluation of the change in Flat Band Voltage Delta V sub fb for the pre- and post-radiation stressed devices Compilation of all 1 MHz data for cataloging purposes and the establishment of a benchmark for the new computer automated test system and Reported data to the Contracting Officers Technical Representative COTR on a case-by-case basis, as time was of the essence.

Subject Categories:

  • Radiation and Nuclear Chemistry
  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE